Combining two-dimensional materials and high-k gate dielectrics offers a promising way to
enhance the device performance of tunneling field-effect transistor (TFET). In this work, the …

Structural, morphological, and band offset properties of GaAs/Ge/GaAs heterostructures
grown in situ on (100),(110), and (111) A GaAs substrates using two separate molecular …

We investigate germanium-tin alloy (Ge 1− x Sn x) as a material for the design of tunneling
field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge 1− x …

Structural and band alignment properties of atomic layer Al 2 O 3 oxide film deposited on
crystallographically oriented epitaxial Ge grown in-situ on (100),(110), and (111) A GaAs …

Staggered heterostructure gate stack TFET is proposed. The analog, RF, and linearity
performance of the device were studied in an ATLAS TCAD device simulator. The high K …

N-type tunnel field effect transistors (TFETs) with Si 1− x Ge x/Si hetero-junction in the ultra-
shallow N+ pocket region have been fabricated. This paper investigates the total ionization …

We have investigated the structural and band alignment properties of nanoscale titanium
dioxide (TiO 2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on …

The band alignment properties of atomic layer HfO 2 film deposited on epitaxial (110) Ge,
grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy …

Ferroelectric–germanium heterostructures have a strong potential for multifunctional
devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while …

Growth, structural, and band alignment properties of pulsed laser deposited amorphous
BaTiO 3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their …