Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Wide bandgap semiconductors show promise for high-power microwave electronic devices.
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …

Color centers with long-lived spins are established platforms for quantum sensing and
quantum information applications. Color centers exist in different charge states, each of them …

Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been
investigated in the temperature range of 100–900 K, both experimentally and theoretically …

Electron density and Hall mobility data were simultaneously analyzed in the frame of the
relaxation time approximation in order to identify the main scattering mechanisms that limit …

The electrical device characteristics of Ni/β-Ga 2 O 3 vertical Schottky barrier diodes (SBDs)
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …

Abstract n‐Type diamond formation is one of the most important issues for the electronic
application of diamond. Phosphorus is the best n‐type dopant candidate at the moment. We …

Temperature dependent properties of wide bandgap semiconductors have been used to
calculate theoretical specific on-resistance, breakdown voltage, and thermal run-away …