The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

Abstract Metal-oxide-semiconductor (MOS) devices are affected by generation,
transformation, and charging of oxide and interface defects. Despite 50 years of research …

Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and
embedded in GlobalFoundries 28 nm bulk high-metal gate (HKMG) technology (28SLPe) …

Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of
high-κ gate dielectrics via higher-κ (> 20) materials and interfacial layer (IL) scavenging …

A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …

For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …

Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-
centrosymmetry and exhibit spontaneous polarization, are promising for applications in …