Luminescence properties of defects in GaN
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow
luminescence (YL) band gives way to a green luminescence (GL) band at high excitation …
luminescence (YL) band gives way to a green luminescence (GL) band at high excitation …
Two charge states of the acceptor in GaN: Evidence from photoluminescence
We have found a photoluminescence (PL) band with unusual properties in GaN. The blue
band, termed as the BL C band, has a maximum at about 2.9 eV and an extremely short …
band, termed as the BL C band, has a maximum at about 2.9 eV and an extremely short …
APPLIED PHYSICS REVIEWS
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Carrier dynamics in bulk GaN
Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …
[LIBRO][B] Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN+ON and GaN:CN
Point defects play an important role in the photoelectrical properties of semiconductor
materials, and they can be luminescence centers. However, the relationships among the …
materials, and they can be luminescence centers. However, the relationships among the …
Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first …
The variation in ferromagnetism caused by position-specific point defects in GaN (100 nm)
thin films is reported here. We observe a systematic variation of magnetic properties in GaN …
thin films is reported here. We observe a systematic variation of magnetic properties in GaN …
Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence
The below-gap emission components including yellow luminescence (YL) band of an
MOCVD grown undoped GaN have been studied by the two-wavelength-excited …
MOCVD grown undoped GaN have been studied by the two-wavelength-excited …
Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux
Z Si, Z Liu, S Zheng, X Dong, X Gao, J Wang… - Journal of …, 2023 - Elsevier
We have grown a high growth rate, and low dislocation density (DD) Ga-polar GaN (DD: 4×
10 5/cm 2) and N-polar GaN (DD: 8× 10 5/cm 2) bulk single crystal using Na Flux. Variable …
10 5/cm 2) and N-polar GaN (DD: 8× 10 5/cm 2) bulk single crystal using Na Flux. Variable …