The unidirectional spin Hall magnetoresistance (USMR) is one of the most complex spin-
dependent transport phenomena in ferromagnet/nonmagnet bilayers, which involves spin …

Using a two-color time-resolved pump-probe spectroscopy scheme, we studied the
generation and detection of longitudinal coherent acoustic phonons, generated by ultrafast …

Abstract Diode p-(GaMn) As/n-InGaAs/n+-GaAs heterostructures with different thicknesses
(from 5 to 50 nm) of the (Ga, Mn) As dilute magnetic semiconductor layer have been …

In this work the thermodynamic and magnetic properties of a two-holes parabolic quantum
dot are studied in the presence of hole-hole and hole-phonon interactions in the range of …

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of
photoconduction (SPD-PC) in (Ga, Mn) As/GaAs heterojunction. We think three kinds of …

This work focuses on employing the use of elastic strain or do** to increase the nuclear
spin polarization that results after optical pum** in GaAs. Usually, in III-V semiconductors …

III-V compound semiconductors and alloys have varying optical and transport properties and
have been very important over the years in condensed matter physics in terms of …

The unidirectional magnetoresistance (UMR) is one of the most complex spin-dependent
transport phenomena in ferromagnet/non-magnet bilayers, which involves spin injection and …

Изготовлены и исследованы диодные гетероструктуры $ p $-(Ga, Mn) As/$ n $-InGaAs/$
n^{+} $-GaAs, отличающиеся толщиной (от 5 до 50 nm) слоя разбавленного магнитного …