The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …

InGaAs homojunction Tunnel FET devices are demonstrated with sub-60 mV/dec Sub-
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …

TFETs are promising candidates for future low-power logic applications because of their
potential for outperforming conventional MOSFETs under reduced supply voltage (VDD) …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

Tunnel FETs (TFETs) have been identified as the most promising steep slope devices for
ultralow power logic circuits. In this paper, we demonstrate in-plane InAs/Si TFETs …

We investigate the impact of gate-stack engineering using W/ZrO 2/Al 2 O 3 on the
performance of planar-type InGaAs tunneling field-effect transistors (TFETs). It is shown that …

In this work, a novel Gallium Arsenide Antimonide (GaAsSb)/Indium Gallium Arsenide
(InGaAs) hetero-junction double-dual gate-gate stack Vertical Tunnel FET (HJ-VTFET) …

The explorations of the innovative properties of engineered nanomaterials specifically in
electronics and electrical applications are not new and yet are progressing, particularly in …

The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a
sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected …

In this work, we review progress in III-V transistor technologies. Key approaches for silicon
integration are described, with a distinction being made between large area layer transfer …