Phase change materials (PCMs) can exist in at least two different phases (an amorphous
and one or more crystalline phases), and they can be switched repeatedly between these …

Topological insulator (TI), a promising quantum and semiconductor material, has gapless
surface state and narrow bulk band gap. Firstly, the properties, classifications and …

A detailed investigation of electronic switching in chalcogenide-based phase-change
memory devices is presented. An original bandgap model consistent with the microscopic …

A number of sesqui‐chalcogenides show remarkable properties, which make them attractive
for applications as thermoelectrics, topological insulators, and phase‐change materials. To …

Ge–Sb–Te alloys are widely used for data recording based on the rapid and reversible
amorphous-to-crystalline phase transformation that is accompanied by increases in the …

The high dielectric optical contrast between the amorphous and crystalline structural phases
of non-volatile phase-change materials (PCMs) provides a promising route towards …

The lattice dynamics in the IV–VI compounds GeTe, SnTe and PbTe were studied by 125Te
and 119Sn nuclear inelastic scattering and the obtained partial density of phonon states …

Optical and electrical properties of sputtered Ge 2 Sb 2 Te 5 films in amorphous and
crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl …

Thermal transport is a key feature for the operation of phase change memory devices which
rest on a fast and reversible transformation between the crystalline and amorphous phases …

Phase-change random access memory (PCRAM) has attracted much attention for next-
generation nonvolatile memory that can replace flash memory and can be used for storage …