Phase change materials

S Raoux - Annual Review of Materials Research, 2009 - annualreviews.org
Phase change materials (PCMs) can exist in at least two different phases (an amorphous
and one or more crystalline phases), and they can be switched repeatedly between these …

Phase change memory technology

GW Burr, MJ Breitwisch, M Franceschini… - Journal of Vacuum …, 2010 - pubs.aip.org
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-
state memory technology built around the large electrical contrast between the highly …

Soft bit data transmission for error correction control in non-volatile memory

N Mokhlesi, H Chin, D Zhao - US Patent 7,966,550, 2011 - Google Patents
Data stored in non-volatile storage is decoded using iterative probabilistic decoding. An
error correcting code such as a low density parity check code may be used. In one …

Non-volatile memory with soft bit data transmission for error correction control

N Mokhlesi, H Chin, D Zhao - US Patent 7,966,546, 2011 - Google Patents
Data stored in non-volatile storage is decoded using iterative probabilistic decoding. An
error correcting code such as a low density parity check code may be used. In one …

Producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array

BL Jackson, DS Modha, B Rajendran - US Patent 8,527,438, 2013 - Google Patents
Embodiments of the invention relate to producing spike-timing dependent plasticity in an
ultra-dense synapse cross-bar array for neuromorphic systems. An aspect of the invention …

Non-volatile memory with guided simulated annealing error correction control

H Chin, N Mokhlesi - US Patent 7,975,209, 2011 - Google Patents
Data in non-volatile storage is decoded using iterative probabilistic decoding. An error
correcting code such as a low density parity check code may be used. In one approach …

Method for decoding data in non-volatile storage using reliability metrics based on multiple reads

N Mokhlesi, H Chin, D Zhao - US Patent 8,468,424, 2013 - Google Patents
US8468424B2 - Method for decoding data in non-volatile storage using reliability metrics
based on multiple reads - Google Patents US8468424B2 - Method for decoding data in non-volatile …

Understanding amorphous states of phase-change memory using Frenkel-Poole model

YH Shih, MH Lee, M Breitwisch… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
A method based on Frenkel-Poole emission is proposed to model the amorphous state (high
resistance state) in mushroom-type phase-change memory devices. The model provides …

Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory

YH Shih, JY Wu, B Rajendran, MH Lee… - 2008 IEEE …, 2008 - ieeexplore.ieee.org
Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory
cells is associated with spontaneous crystallization. In this paper, the change in the …

Guided simulated annealing in non-volatile memory error correction control

H Chin, N Mokhlesi - US Patent 7,971,127, 2011 - Google Patents
Data in non-volatile storage is decoded using iterative probabilistic decoding. An error
correcting code such as a low density parity check code may be used. In one approach …