Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview

Y Arakawa, MJ Holmes - Applied Physics Reviews, 2020 - pubs.aip.org
Semiconductor quantum dots (QDs) of various material systems are being heavily
researched for the development of solid state single photon emitters, which are required for …

Material platforms for defect qubits and single-photon emitters

G Zhang, Y Cheng, JP Chou, A Gali - Applied Physics Reviews, 2020 - pubs.aip.org
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

J Stachurski, S Tamariz, G Callsen, R Butté… - Light: Science & …, 2022 - nature.com
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to
maintain single photon emission up to room temperature. Here, we report on the evolution of …

Spectral diffusion time scales in InGaN/GaN quantum dots

K Gao, H Springbett, T Zhu, RA Oliver… - Applied Physics …, 2019 - pubs.aip.org
ABSTRACT A detailed temporal analysis of the spectral diffusion phenomenon in single
photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both …

Predicting solid state material platforms for quantum technologies

OL Hebnes, ME Bathen, ØS Schøyen… - npj Computational …, 2022 - nature.com
Semiconductor materials provide a compelling platform for quantum technologies (QT).
However, identifying promising material hosts among the plethora of candidates is a major …

Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

S Castelletto, A Boretti - ACS Applied Nano Materials, 2024 - ACS Publications
Gallium nitride (GaN) is an advanced semiconductor primarily known for its current
applications in lasers and high-power electronics. With the availability of various growth …

Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure

X Sun, P Wang, T Wang, D Li, Z Chen, L Chen… - Applied Physics …, 2019 - pubs.aip.org
We report the realization of single photon emission from an InGaN quantum dot in a GaN
inverted truncated-pyramid structure: a single photon horn. The structural parameters of the …

[HTML][HTML] Single photon generation from AlGaN exciton localization centers exhibiting narrow spectral linewidths

M Arita, T Iki, MJ Holmes, Y Arakawa - APL Materials, 2021 - pubs.aip.org
We report the discovery and characterization of single-photon-emitting carrier localization
centers that are spontaneously formed along misfit dislocations in AlGaN. The emitters …

Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure

X Sun, P Wang, Z Chen, K Gao, M Li, J Zhang… - Superlattices and …, 2020 - Elsevier
We present a detailed analysis of the second-order correlation behavior of photons emitted
from an InGaN QD in a photonic horn structure in order to discuss the excitation, emission …

Identification of the spintronic NiGaVN center in c-GaN and its qubit applications

R Gao, G Bian, H Yuan, H Wang - Journal of Physics D: Applied …, 2021 - iopscience.iop.org
Identification of the spintronic NiGaVN center in c-GaN and its qubit applications - IOPscience
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