Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

Mechanoluminescence (ML) is generated during exposures of certain materials to
mechanical stimuli. Many solid materials produce ML during their fracturing, however, the …

Narrower band red and green emission in phosphor‐converted white light‐emitting diodes
(wLEDs) can improve the efficacy and color gamut in lighting and display applications. A …

Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …

Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …

Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …

In modern technology devices, an energy‐saving miniature near‐infrared (NIR) light source
plays a critical role in non‐destructive, non‐invasive sensing applications and further …

Truly bulk ZnGa 2 O 4 single crystals were obtained directly from the melt. High melting point
of 1900±20 C and highly incongruent evaporation of the Zn-and Ga-containing species …

In the course of development of transparent semiconducting oxides (TSOs) we compare the
growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) …

Ultra-thin films of low dam** ferromagnetic insulators with perpendicular magnetic
anisotropy have been identified as critical to advancing spin-based electronics by …