[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
[HTML][HTML] Antiferromagnetic spintronics: An overview and outlook
Over the past few decades, the diversified development of antiferromagnetic spintronics has
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–
orbit torque is key to the development of future spintronic memories. However, both …
orbit torque is key to the development of future spintronic memories. However, both …
Recent advances in spin-orbit torques: Moving towards device applications
The ability of spintronic devices to utilize an electric current for manipulating the
magnetization has resulted in large-scale developments, such as magnetic random access …
magnetization has resulted in large-scale developments, such as magnetic random access …
Nonvolatile multistates memories for high-density data storage
In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …
A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic
The class of two-dimensional (2D) materials is critical in the domain of scientific investigation
and technology due to its low dimensionality which offers a unique platform to modify the …
and technology due to its low dimensionality which offers a unique platform to modify the …
Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
As Moore's law is gradually losing its effectiveness, the development of alternative high-
speed and low-energy–consuming information technology with postsilicon-advanced …
speed and low-energy–consuming information technology with postsilicon-advanced …
Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
We report on the current-induced magnetization switching of a three-terminal perpendicular
magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling …
magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling …
Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing
This paper deals with a new MRAM technology whose writing scheme relies on the Spin
Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast …
Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast …
Ultra-fast perpendicular spin–orbit torque MRAM
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-
terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current …
terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current …