The article describes an innovative methodology for the design and experimental validation
of monitoring and anomaly detection algorithms, with a particular focus on the aging …

This letter proposes an SiC mosfet gate oxide degradation monitoring method based on the
peak value of the bandpass filtered gate voltage during turn-on transitions. The frequency …

Condition monitoring (CM) of the components with highest probability of failure in converter
circuits can significantly contribute to having a long-term reliable operation. Insulated-gate …

The hexagonal cell topology of planar SiC VDMOSFETs with varied JFET width (LJFET) are
designed and manufactured in this study. L m has the best HF-FOM (R Cgd) and HF-FOM (R …

Gate oxide degradation has been recognized as a critical reliability problem for SiC
MOSFETs, which severely hinders the widespread adoption of SiC MOSFETs. Online …

This paper proposes a per-phase switching frequency control method to extend the lifespan
of a three-phase voltage source inverter. The model predictive control that can intuitively …

Bond wire lift-off is one of the main failure mechanisms for silicon carbide mosfets. This
occurs when the metallurgical weld between the bond-wire and the device source breaks …

Various methods have been discussed in the literature regarding enabling the over-current
(OC) capability of silicon carbide (SiC) MOSFETs. SiC MOSFETs can operate at up to 250° …

Gate oxide degradation accounts for one of the major chip-related failure modes both in
Silicon (Si) and Silicon Carbide (SiC) power MOSFETs. Due to the thinner structure of the …

Crosstalk poses a significant concern in power electronics converters that incorporate a
phase-leg structure. The detrimental impact of crosstalk can result in device malfunction or …