InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Abstract InAs/(In, Ga) Sb Strained Layer Superlattices (SLSs) have made significant
progress since they were first proposed as an infrared (IR) sensing material more than three …

We present an interband cascade infrared photodetector based on Ga-free type-II
superlattice absorbers. Substituting the more standard InAs/GaSb superlattice for a Ga-free …

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice
pin photodetector grown directly on Si substrate is demonstrated and characterized …

The authors reported a heterojunction dark current simulation method for InAs/GaSb long
wavelength infrared barrier detectors. Calculations using the dark current model with energy …

The composition of anodic sulfidization layers of GaSb and InAs, prepared by
electrochemistry anodic sulfidization, are investigated by X-ray photoelectron spectroscopy …

The authors describe the noise characterization of a mid-wavelength-infrared (MWIR)
photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice …

The implementation of strained layer superlattices (SLS) for detection of infrared (IR)
radiation has enabled compact, high performance IR detectors and two-dimensional focal …

Antimonide compounds are fabricated in membrane form to enable materials combinations
that cannot be obtained by direct growth and to support strain fields that are not possible in …

We investigate the bulk passivation of the dilute bismide alloy InAsSbBi by plasma-assisted
hydrogenation. InAsSbBi is of significant interest for mid-to long-wave infrared …