An efficient implementation of the density-gradient (DG) approach for the finite element and
finite difference methods and its application in drift-diffusion (DD) simulations is described in …

Recent progresses in quantum dots technology allow fundamental studies of single donors
in various semiconductor nanostructures. For the prospect of applications figures of merits …

In this paper, we have proposed a new partially cylindrical fin field-effect transistor (PC-
FinFET), where the upper region of fins has partially cylindrical shape and the lower region …

An analytical and explicit compact model for undoped symmetrical silicon double gate
MOSFETs (DGMOSFETs) with Schottky barrier (SB) source and drain is presented. The SB …

This article proposes investigation of low power performance of a fin field-effect transistor
(FinFET) with surrounding gates through a calibrated technology computer-aided design …

The evolution of traditional metal–oxide–semiconductor field-effect transistors (MOSFETs)
from planar single-gate devices into 3-D ones with multiple gates and high-κ insulators …

In this work, a model is developed in order to obtain analytical expressions of the
subthreshold characteristics of advanced Pi-gate FET transistors. Based on the solution of …

A new analytical model is presented for the inversion charge of surrounding-gate transistors
(SGTs). Quantum effects are taken into account by means of a modified capacitance model …

In this work, the behavior of the gate insulator capacitance of different Surrounding Gate SOI
devices with square and circular cross-sections has been studied. It is shown that the …

In this paper we introduce an analytical model for square Gate-All-Around (GAA) MOSFETs
including quantum effects. With the model developed, it is possible to provide an analytical …