Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and
simulate the defect evolution in three different materials. We start by explaining the theory of …

n-type do** in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high do** concentrations. Here, we …

Electronic structure calculations are used to investigate the structures and relative energies
of defect clusters formed between arsenic atoms and lattice vacancies in germanium and, for …

Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the
performance of Si‐based devices. However, owing to the impact of the external …

Abstract Three-dimensional (3D) CMOS technology encourages the use of UV laser
annealing (UV-LA) because the shallow absorption of UV light into materials and the …

Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

The behavior during annealing of low-energy As-implanted Si have been investigated by
comparing secondary ion mass spectrometry (SIMS) and simulated profiles. Z-contrast …

This report (I) aims to investigate defect behavior during the growth of heavily phosphorus
(P)-doped Czochralski silicon (HP-Cz-Si) crystals. The defects and P chemical states in as …