▪ Abstract This paper reviews the literature on size effects in ferroelectric materials, with an
emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect …

The processing science and fundamental understanding of defect chemistry of BaTiO 3 is a
model example of how material science is used to guide the materials engineering of …

In the past year it has become possible to fabricate ferroelectric thin-film memories onto
standard silicon integrated circuits that combine very high speed (30-nanosecond …

In this response, we report the results of additional experiments that bear on the issues
raised in the comment by Eerenstein et al.(1) and suggest some additional possible reasons …

Resistive random-access memory (RRAM) devices have attracted broad interest as
promising building blocks for high-density nonvolatile memory and neuromorphic computing …

The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years
ago, but we just recently demonstrated both an intentional material system and an analytical …

The behavior of the P m 3¯ mR 3¯ c phase transition in La Al O 3 (TC= 813 K from
differential scanning calorimetry measurements) has been studied using temperature …

A topical review is given of the physics of submicron ferroelectrics, describing the application
considerations for memory devices (both as switching memory elements for ferroelectric …

Temperature dependent impedance spectroscopy enables the many contributions to the
dielectric and resistive properties of condensed matter to be deconvoluted and …

Ferroelectric oxides are used in many modern technologies including sensors, actuators,
thin-film memories and energy harvesting. Ferroelectrics of similar composition often show …