Non-volatile resistive switching, also known as memristor effect, where an electric field
switches the resistance states of a two-terminal device, has emerged as an important …

High-performance radio frequency (RF) switches play a critical role in allowing radio
transceivers to provide access to shared resources such as antennas. They are important …

Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal
oxides, colloquially known as memristors, and of broad interest for memory technology and …

Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile
resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin …

Two-dimensional (2D) materials have recently been incorporated into resistive memory
devices because of their atomically thin nature, but their switching mechanism is not yet well …

Resistive-memory devices promise to revolutionize modern computer architecture
eliminating the data-shuttling bottleneck between the memory and processing unit. Recent …

The atomristor (monolayer two-dimensional (2D)-material memristor) is competitive in high-
speed logic computing due to its binary feature, lower energy consumption, faster switch …

Abstract Two-dimensional (2D) monolayers have gained significant attention as ultrathin
active layers for fabricating atomic-scale memristor (atomristor) structures due to their …

Abstract Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have
proved to be serious candidates to replace silicon in several technologies with enhanced …

Electrical resistance control programming of conductive bridging random access memory
(CBRAM) radio frequency (RF) switches could benefit the development of electronically …