Spin-based electronics or 'spintronics' is a rapidly expanding research area that offers the
promise of surpassing the limits of conventional electrical charge-based semiconductor …

A low temperature nickel process has been developed that produces Ohmic contacts to n-
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …

We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …

We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-
Ge contact at room temperature (RT), employing three-terminal Hanle measurements. A …

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to
electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements …

Germanium is a widely used material for electronic and optoelectronic devices and recently
it has become an important material for spintronics and quantum computing applications …

We report the electrical creation of a spin accumulation in p-type Ge using an epitaxial
Fe/MgO contact. The induced spin polarization was successfully detected by the Hanle effect …

Using high-quality Fe 3 Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …

Hole spin relaxation and intervalley electron scattering in bulk Ge at 300 K are distinguished
and selectively investigated using a spectrally, temporally, and polarization-resolved pump …