The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS)
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …

Further scaling of complementary metal oxide semiconductor gate stacks will require gate
dielectrics with a higher dielectric constant (K) than HfO 2⁠. We point out that this will require …

The mechanism of flat-band voltage shifts in La-and Al-based, etc., oxide cap** layers in
high-K (dielectric constant) metal gate stacks is investigated by ab initio calculations on …

The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of
rich correlated‐electron physics, whose origins are still being debated 15 years later. In …

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der
Waals materials with a discrete energy bandgap, many 2D‐like thin field effect transistors …

We show that group III elements such as La, Y, Sc, and Al can passivate adjacent oxygen
vacancies in HfO 2 and ZrO 2 by shifting the vacancy gap state up into the conduction band …