Continued downscaling of semiconductor devices has placed stringent constraints on all
aspects of the fabrication process including plasma-assisted anisotropic etching. To address …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …

Atomic layer etching (ALE), a cyclic process of surface modification and removal of the
modified layer, is an emerging damage-less etching technology for semiconductor …

Cyclic atomic layer etching (ALE) of SiN with high selectivity to SiO2, utilizing a
hydrofluorocarbon deposition followed by exposure to hydrogen plasma, is presented. The …

As semiconductor device structures continue to approach the nanometer size range, new
challenges in the fabrication of such devices have arisen. For example, the need for high …

Atomic layer etching (ALE) has emerged as a promising technique for the precise and
controlled removal of materials in nanoscale devices. ALE processes have gained …

Herein, atomic layer etching (ALE) of silicon dioxide (SiO 2) was performed using
trifluoroiodomethane (CF 3 I) in a capacitively coupled plasma reactor. First, a fluorocarbon …

Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during
sequential half-cycles of plasma-assisted fluorocarbon (CF x) film deposition and Ar plasma …

Atomic layer etching (ALE) of SiO 2 was studied by alternating exposure of a 5 nm-thick SiO
2 film on Si substrate to (1) a plasma beam emanating from a cC 4 F 8 inductively coupled …