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Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material …
Herein, a finite element simulation framework for phase‐change memory devices that
simultaneously solves for current continuity, electrothermal heating, and crystallization …
simultaneously solves for current continuity, electrothermal heating, and crystallization …
Growth dominated crystallization of GeTe mushroom cells during partial SET operation
Phase change memory devices are a leading candidate for non-volatile memory arrays, as
artificial synapses in neuromorphic circuits, and for in-memory computing. These …
artificial synapses in neuromorphic circuits, and for in-memory computing. These …
[HTML][HTML] Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase …
We model electrical conductivity in metastable amorphous Ge 2 Sb 2 Te 5 (GST) using
independent contributions from temperature and electric field to simulate phase change …
independent contributions from temperature and electric field to simulate phase change …
Modeling Filamentary Conduction in Reset Phase Change Memory Devices
We performed a computational analysis on percolation transport and filament formation in
amorphous $ Ge_2Sb_2Te_5 $(a-GST) using 2D finite-element multi-physics simulations …
amorphous $ Ge_2Sb_2Te_5 $(a-GST) using 2D finite-element multi-physics simulations …
Cellular automata dynamics of nonlinear optical processes in a phase-change material
Changes in the arrangement of atoms in matter, known as structural phase transitions or
phase changes, offer a remarkable range of opportunities in photonics. They are exploited in …
phase changes, offer a remarkable range of opportunities in photonics. They are exploited in …
Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory
Herein, logic function implementations are computationally demonstrated using lateral and
vertical multicontact phase‐change devices integrated with complementary metal–oxide …
vertical multicontact phase‐change devices integrated with complementary metal–oxide …
(Digital Presentation) Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells
We model the current density in a semiconductor based on the driftdiffusion transport of the
charge carriers to accurately determine the thermoelectric effects in the bulk material …
charge carriers to accurately determine the thermoelectric effects in the bulk material …
Impact of solid-liquid interfacial thermodynamics on the phase change memory RESET process
MJ Lewis - 2024 - search.proquest.com
A model of the RESET melting process in conventional phase-change memory (PCM)
devices is constructed in which the Gibbs-Thomson effect, representing local equilibrium at …
devices is constructed in which the Gibbs-Thomson effect, representing local equilibrium at …
[HTML][HTML] Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation
The integration level is a significant index that can be used to characterize the performance
of non-volatile memory devices. This paper proposes innovative design schemes for high …
of non-volatile memory devices. This paper proposes innovative design schemes for high …
Finite Element Analysis of GeTe/Ge2Sb2Te5 Interfacial Phase Change Memory Devices
High switching current and energy are major challenges yet to be overcome effectively in
phase change memory for large scale industry-level production. Superlattice based …
phase change memory for large scale industry-level production. Superlattice based …