Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

Single crystal gallium nitride (GaN) substrates are highly demanded for fabricating
advanced optoelectronic devices. It is thus essential to develop high efficiency machining …

Molecular dynamics simulations are carried out to investigate the nano abrasive machining
of monocrystalline gallium nitride (GaN). Effects of the cutting velocity, depth of cut (DOC) …

Beta-phase gallium oxide (β-Ga 2 O 3) is a potential candidate due to its ultra-wide bandgap
and physical and chemical stabilities. However, its deformation and fracture behaviors are …

Abstract Gallium oxide (Ga 2 O 3) single crystals are an ultrawide bandgap semiconductor
with wide industrial applications. Ultra-precision grinding is an essential sha** process in …

Abstract Bulk‐scale (2¯ ̄2 01)‐oriented monoclinic beta‐phase gallium oxide (β‐Ga2O3)
single crystals are brittle and fracture at low compressive strains. Here, it is reported that …

Semiconductor and laser single crystals are usually brittle and hard, which need to be
ground to have satisfactory surface integrity and dimensional precision prior to their …

Abstract β-Ga 2 O 3 is a promising ultra-wide bandgap semiconductor. The deformation of β-
Ga 2 O 3 was few investigations, especially on the cleavage planes which hindered the high …

Beta-phase gallium oxide (β-Ga 2 O 3) has garnered significant attention in recent years as
an ultra-wide bandgap semiconductor material. However, its surface layer damage behavior …