The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

Crystal-growth processes of Si during solid phase epitaxy (SPE) in the [001] direction have
been investigated based on molecular-dynamics (MD) simulations using the Tersoff …

The effects of some experimental parameters on the solid-phase crystallization of
amorphous films on single crystals, a process known as Solid Phase Epitaxy (SPE), are …

We review the field of solid-phase epitaxy (SPE), a crystallization process during which
atoms undergo bonding rearrangements that allow them to transfer from a metastable …

The inelastic electronic scattering of 84Kr at energies of 0.5–5 MeV and 131,132 Xe ions at
energies of 1–5 MeV is directly confirmed to play a role in the ion‐beam‐induced epitaxial …

The crystallization properties of amorphous silicon (a-Si) thin film deposited by rf magnetron
sputter deposition with substrate bias have been thoroughly characterized. The …

Defects and amorphous C layers or clusters in a type-Ib diamond formed by C-or P-ion
implantation under certain doses are clearly annealed or epitaxially crystallized during …

The amorphous Si layers deposited by low-pressure chemical vapor deposition on (100)-
crystal-Si substrates and subjected to Xe-ion-beam irradiation are crystallized epitaxially in a …