We present a detailed investigation into the optical characteristics of individual InAs
quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low …

Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically
varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the …

An InGaAsSb overgrown layer, ie, strain-reducing layer (SRL), is adopted to increase the
emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as …

In this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes
(SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. In order …

In this study, the optical properties of InAs quantum dots (QDs) with various strain-reducing
layers (SRLs) of GaAsSb and InGaAsSb are characterized using photoluminescence (PL) …

The superior operation characteristics of quantum dot (QD) lasers with excited-state (ES)
emission, namely high saturation gain and modulation bandwidth, are advantageous for …

The pinholelike defects often observed in multistack InAs quantum dot structures on GaAs
have been investigated comprehensively. Due to the high surface stress of InAs quantum …

The optical and structural properties of InAs quantum dots (QDs) with a thin InAlAs–InGaAs
composite cap layer have been systematically investigated by photoluminescence and …

This study investigates the feasibility of growing high quality columnar InAs/GaAsSb
quantum dots (QDs) on a GaAs (100) substrate using a molecular beam epitaxial system …