A ten-year perspective on dilute magnetic semiconductors and oxides
T Dietl - Nature materials, 2010 - nature.com
Over the past ten years, the search for compounds combining the properties of
semiconductors and ferromagnets has evolved into an important field of materials science …
semiconductors and ferromagnets has evolved into an important field of materials science …
Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs
Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …
Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
Controlling the Curie temperature in (Ga, Mn) As through location of the Fermi level within the impurity band
Abstract The ferromagnetic semiconductor (Ga, Mn) As has emerged as the most studied
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …
[HTML][HTML] Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …
degrees of freedom as well as charge transport in materials and devices. While metal-based …
Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs
The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is
controversial because of an insufficient understanding of its band structure and Fermi level …
controversial because of an insufficient understanding of its band structure and Fermi level …
High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe) Sb
Over the past two decades, intensive studies on various ferromagnetic semiconductor (FMS)
materials have failed to realize reliable FMSs that have a high Curie temperature (TC> 300 …
materials have failed to realize reliable FMSs that have a high Curie temperature (TC> 300 …
Anisotropic magnetoresistance components in (Ga, Mn) As
We explore the basic physical origins of the noncrystalline and crystalline components of the
anisotropic magnetoresistance (AMR) in (Ga, Mn) As. The sign of the noncrystalline AMR is …
anisotropic magnetoresistance (AMR) in (Ga, Mn) As. The sign of the noncrystalline AMR is …
Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga, Mn) As
(Ga, Mn) As is a paradigm of a diluted magnetic semiconductor which shows
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …