A ten-year perspective on dilute magnetic semiconductors and oxides

T Dietl - Nature materials, 2010 - nature.com
Over the past ten years, the search for compounds combining the properties of
semiconductors and ferromagnets has evolved into an important field of materials science …

Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs

A Richardella, P Roushan, S Mack, B Zhou, DA Huse… - science, 2010 - science.org
Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …

Spin-dependent phenomena and device concepts explored in (Ga, Mn) As

T Jungwirth, J Wunderlich, V Novák, K Olejník… - Reviews of Modern …, 2014 - APS
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Controlling the Curie temperature in (Ga, Mn) As through location of the Fermi level within the impurity band

M Dobrowolska, K Tivakornsasithorn, X Liu… - Nature materials, 2012 - nature.com
Abstract The ferromagnetic semiconductor (Ga, Mn) As has emerged as the most studied
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …

[HTML][HTML] Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

M Tanaka, S Ohya, P Nam Hai - Applied Physics Reviews, 2014 - pubs.aip.org
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …

Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs

S Ohya, K Takata, M Tanaka - Nature Physics, 2011 - nature.com
The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is
controversial because of an insufficient understanding of its band structure and Fermi level …

High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe) Sb

NT Tu, PN Hai, M Tanaka - Applied Physics Express, 2018 - iopscience.iop.org
Over the past two decades, intensive studies on various ferromagnetic semiconductor (FMS)
materials have failed to realize reliable FMSs that have a high Curie temperature (TC> 300 …

Anisotropic magnetoresistance components in (Ga, Mn) As

AW Rushforth, K Výborný, CS King, KW Edmonds… - Physical review …, 2007 - APS
We explore the basic physical origins of the noncrystalline and crystalline components of the
anisotropic magnetoresistance (AMR) in (Ga, Mn) As. The sign of the noncrystalline AMR is …

Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga, Mn) As

M Kobayashi, I Muneta, Y Takeda, Y Harada… - Physical Review B, 2014 - APS
(Ga, Mn) As is a paradigm of a diluted magnetic semiconductor which shows
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …