Defect Engineering of Bi2SeO2 Thermoelectrics
Bi2SeO2 is a promising n‐type semiconductor to pair with p‐type BiCuSeO in a
thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency …
thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency …
Low leakage current in heteroepitaxial ferroelectric films on
Wurtzite (Al, Sc) N ferroelectrics are attractive for microelectronics applications due to their
chemical and structural compatibility with wurtzite semiconductors, such as Ga N and (Al …
chemical and structural compatibility with wurtzite semiconductors, such as Ga N and (Al …
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0. 73Sc0. 27N Thin Films
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents
in sputtered wurtzite-type ferroelectric Al0. 73Sc0. 27N thin films, along with its impact on the …
in sputtered wurtzite-type ferroelectric Al0. 73Sc0. 27N thin films, along with its impact on the …
From Prediction to Experimental Realization of Ferroelectric Wurtzite AlGdN Alloys
AlN-based alloys find widespread application in high-power microelectronics,
optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN …
optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN …