Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …

Output capacitance (C OSS) loss (E DISS) is produced when the C OSS of a power device is
charged and discharged, which ideally should be a lossless process. This loss was recently …

Dynamic on-resistance R_ON, hysteresis output capacitance (Coss) loss, and short-circuit
(SC) capability are three crucial reliability and robustness concerns facing many GaN high …

Output capacitance (C OSS) loss (E DISS) is a loss recently found to incur in a power
semiconductor device when its C OSS is charged and discharged, which ideally should be a …

Output capacitance (Coss) loss is generated when the Coss of a power device is charged
and discharged, which is ideally a lossless process. This work deploys a recently developed …

C_OSS loss (E_OSS) and Dynamic R_ON, which combine switching loss and conduction
loss in currently available GaN HEMTs, severely limit their performance in hard switching …

Output capacitance loss is generated when the output capacitor of a power device is
charged and discharged in its OFF state, which ideally should be a lossless process. This …

Output capacitance (C OSS) loss (E DISS) is a power loss recently revealed in a power
semiconductor device when its C OSS is charged and discharged, which ideally should be a …

Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining
increased adoption in applications like mobile electronics and data centers. Benefitting from …