The accurate analysis of microscopy images representing various materials obtained in
scanning probe microscopy, scanning tunneling microscopy, and transmission electron …

The evolution of elastic strain engineering in nanostructures and devices requires
characterization tools that can be used to not only observe but also quantify the actual strain …

A method for measuring and map** displacement fields and strain fields from high-
resolution electron microscope (HREM) images has been developed. The method is based …

Recording atomic‐resolution transmission electron microscopy (TEM) images is becoming
increasingly routine. A new bottleneck is then analyzing this information, which often …

Defects and their associated long-range strain fields are of considerable importance in many
areas of materials science,. For example, a major challenge facing the semiconductor …

The emission of volcanic gases usually precedes eruptive activity, providing both a warning
signal and an indication of the nature of the lava soon to be erupted. Additionally, volcanic …

Strain map** is defined as a numerical image-processing technique that measures the
local shifts of image details around a crystal defect with respect to the ideal, defect-free …

The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

Nanoscale strain map** by four-dimensional scanning transmission electron microscopy
(4D-STEM) relies on determining the precise locations of Bragg-scattered electrons in a …

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a
peak finding technique using high resolution transmission electron microscopy images. We …