Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

Abstract Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors
are highly desired for in-memory computing and ferroelectric photovoltaics or detectors …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local
shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0. 5Zr0 …

Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising
applications in silicon-compatible non-volatile memories and logic devices. However, the …

Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …