Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

This article focuses on one-dimensional (1D) semiconductor subwavelength optical
elements and assesses their potential use as active and passive components in photonic …

Basal-plane stacking faults are an important class of optically active structural defects in
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …

We report on the emission properties of nonpolar a-plane GaN layers grown on r-plane
sapphire. Temperature-, excitation-density-, and polarization-dependent …

Relatively large size (about 10 mm× 10 mm) m‐plane GaN substrates are grown by hydride
vapor phase epitaxy (HVPE). The high crystalline quality of the substrates was observed by …

GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the
zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that …

We present a universal approach for determining the spontaneous polarization P sp of a
wurtzite semiconductor from the emission energies of excitons bound to the different types of …

We investigate the low-temperature photoluminescence of GaN nanowires grown catalyst
free on Si (111). For single nanowires dispersed on Si (111), we observe excitonic …

We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …