Piezoelectric actuation<? pag\break?> for integrated photonics
Recent decades have seen significant advancements in integrated photonics, driven by
improvements in nanofabrication technology. This field has been developed from integrated …
improvements in nanofabrication technology. This field has been developed from integrated …
Vertical etching of scandium aluminum nitride thin films using TMAH solution
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …
Domain control and periodic poling of epitaxial ScAlN
ScAlN is an emerging ferroelectric material that possesses large bandgap and strong
piezoelectricity and holds great promises for enhanced χ (2) nonlinearity. In this study, we …
piezoelectricity and holds great promises for enhanced χ (2) nonlinearity. In this study, we …
Piezoelectric aluminum nitride thin films for CMOS compatible MEMS: Sputter deposition and do**
S Sandeep, RMR Pinto, J Rudresh… - Critical Reviews in …, 2024 - Taylor & Francis
Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN
has gained particular technological relevance due to its unique material properties (large …
has gained particular technological relevance due to its unique material properties (large …
Development of high uniformity Al1-xScxN piezoelectric film stack dry etching process on 8-inch silicon wafers
J Yan, Y Zhou, S Zhang - Vacuum, 2023 - Elsevier
This paper have investigated the basic properties of inductively coupled plasma reactive ion
etching (ICP-RIE) of scandium doped aluminum nitride (Al 1-x Sc x N) thin films on 8-inch …
etching (ICP-RIE) of scandium doped aluminum nitride (Al 1-x Sc x N) thin films on 8-inch …
Measured optical losses of Sc doped AlN waveguides
Although Sc doped AlN (ScAlN) has been used extensively in micro-electro-mechanical
systems (MEMS) devices and more recently in optical devices, there have not been …
systems (MEMS) devices and more recently in optical devices, there have not been …
Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions
Due to their favorable electromechanical properties, such as high sound velocity, low
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
Development of ScAlN PMUTs for medical applications
In this paper, the design, fabrication and characterization of PMUTs for medical applications
are discussed. Scandium (20% Sc/(Sc+ Al)) doped AlN is used as the piezoelectric material …
are discussed. Scandium (20% Sc/(Sc+ Al)) doped AlN is used as the piezoelectric material …
[HTML][HTML] Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures
Heterogeneous integration of functional oxides with ultra-wide bandgap (UWBG)
semiconductors is desired for the realization of novel hybrid systems applicable to a wide …
semiconductors is desired for the realization of novel hybrid systems applicable to a wide …
Dry and wet etching of single-crystal AlN
The dry etching of high crystal quality c-plane AlN grown by metal organic chemical vapor
deposition was examined as a function of source and chuck power in inductively coupled …
deposition was examined as a function of source and chuck power in inductively coupled …