Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

The review article describes the interplay of fundamental research and advanced processes
that have made SiC a unique semiconductor material for power electronic devices. Related …

SiC materials are currently metamorphosing from research and development into a market
driven manufacturing product. SiC substrates are currently used as the base for a large …

SiC nanowires are of high interest since they combine the physical properties of SiC with
those induced by their low dimensionality. For this reason, a large number of scientific …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …

Abstract 4H-SiC (0001),(0001), and (1120) have been directly oxidized by N 2 O at 1300 C,
and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …