Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
A role for graphene in silicon-based semiconductor devices
As silicon-based electronics approach the limit of improvements to performance and
capacity through dimensional scaling, attention in the semiconductor field has turned to …
capacity through dimensional scaling, attention in the semiconductor field has turned to …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Resonant Tunneling Diode Terahertz Sources With up to 1 mW Output Power in the J-Band
Terahertz (THz) oscillators based on resonant tunneling diodes (RTDs) have relatively low
output power, tens to hundreds of microwatts. The conventional designs employ submicron …
output power, tens to hundreds of microwatts. The conventional designs employ submicron …
InP bipolar ICs: Scaling roadmaps, frequency limits, manufacturable technologies
Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-
band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield …
band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield …
Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts
Due to Fermi level pinning (FLP), metal‐semiconductor contact interfaces result in a
Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to …
Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to …
Factors controlling the resistance of Ohmic contacts to n-InGaAs
R Dormaier, SE Mohney - Journal of Vacuum Science & Technology B, 2012 - pubs.aip.org
The authors report specific contact resistance (ρ c) values for Mo-, Ti-, TiW-, Pd-, and Pt-
based Ohmic contacts to n+-In 0.86 Ga 0.14 As that are deposited with either collimated …
based Ohmic contacts to n+-In 0.86 Ga 0.14 As that are deposited with either collimated …
Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts
In this work, we introduce a novel nonalloyed contact structure for n-GaAs and n-In 0.53 Ga
0.47 As by using single metals in combination with a thin dielectric to tune the effective …
0.47 As by using single metals in combination with a thin dielectric to tune the effective …
Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data
We calculate the minimum feasible contact resistivity to n-type and p-type In 0.53 Ga 0.47
As, InAs, GaAs, GaSb, InP, and InSb. The calculations consider image force lowering and …
As, InAs, GaAs, GaSb, InP, and InSb. The calculations consider image force lowering and …
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
The authors report ultralow specific contact resistivity (ρ c) in nonalloyed, in situ Ohmic
contacts to heavily doped n-type In 0.53 Ga 0.47 As: Si layers with 6× 10 19 cm− 3 active …
contacts to heavily doped n-type In 0.53 Ga 0.47 As: Si layers with 6× 10 19 cm− 3 active …