Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many
properties that make it widely studied in the material science, physics, chemistry …

The ZnO-based heterostructures are predicted to be promising candidates for optoelectronic
devices in the infrared and terahertz (THz) spectral domains owing to their intrinsic material …

Oxide semiconductors are promising active layer materials for thin-film transistors (TFTs). In
this paper, ZnSnO (ZTO)-based TFTs are demonstrated. The active layers are prepared …

ZnO-based heterostructures have emerged as promising materials for infrared and terahertz
(THz) optoelectronic technologies capable of operating at room temperatures. This is …

We report on controllable tuning of intersubband transitions in ZnO/Zn 0.60 Mg 0.40 O
multiple quantum well structures grown by molecular beam epitaxy on sapphire. The …

Band structures in wurtzite bulk ZnO/Zn 1− x Mg x O are calculated using first-principles
based on the framework of generalized gradient approximation to density functional theory …

ZnO/ZnMgO multiple quantum wells are investigated in terms of intersubband transitions
within the conduction band. The Schrödinger's and Poisson's equations are solved self …

We report experimental characterization of optical and dielectric constants of ZnO and
ZnMgO nanowires (NWs) with Mg mole fraction of 9%, 18%, 29% and volume fraction 43.5 …

The application of intersubband (ISB) engineering to III-nitride heterostructures sets the
basis for new optoelectronic technologies to cover a wide range of infrared (IR) …

Recently Zinc Oxide has received a renewed attention for the realization of intersubband
devices such as quantum cascade lasers (QCLs). Indeed this material is predicted to be …