Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

Abstract 2D semiconductors (2SEM) can transform many sectors, from information and
communication technology to healthcare. To date, top‐down approaches to their fabrication …

We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by
liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 …

Properties of Ga2O3 thin films grown by atomic layer deposition from GaI3 and O3 on Si
(100) and amorphous SiO2 substrates were investigated. The Ga2O3 films deposited on the …

摘要 Solar-blind ultraviolet photodetectors have broad application prospects in the fields of
national defense and civilian use. The solar-blind ultraviolet photodetectors based on wide …

Abstract Gallium oxide (Ga2O3) usually fractures in the brittle form, and achieving large
plastic deformability to avoid catastrophic failure is in high demand. Here, ε‐Ga2O3 thin films …

The rising demand for missile warnings, fire alarms, and astronomical imaging applications
makes gallium oxide a promising ultra-wide band gap semiconducting material. Integrating …

In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to
grow a 10 μm thick single-crystalline α-Ga2O3 epilayer on a sapphire substrate. By …

Ga 2 O 3 has been considered as one of the most suitable materials for x-ray detection, but
its x-ray detection performance is still at a low level due to the limitation of its quality and …

Electrical contacts are of the greatest importance as they decisively contribute to the overall
performance of photoresistors. Undoped κ-Ga2O3 is an ideal material for photoresistors with …