Self-align-gated GaN field emitter arrays sharpened by a digital etching process
Field emitters are attracting much attention recently because of their potential for high-
frequency and harsh-environment applications. Although silicon is the most studied …
frequency and harsh-environment applications. Although silicon is the most studied …
β-Ga2O3 Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage
M Tang, C Ma, L Liu, X Tan, Y Li, YJ Lee, G Wang… - Nano Letters, 2024 - ACS Publications
Field-emission nanodiodes with air-gap channels based on single β-Ga2O3 nanowires
have been investigated in this work. With a gap of∼ 50 nm and an asymmetric device …
have been investigated in this work. With a gap of∼ 50 nm and an asymmetric device …
Ultra-High Frequency GaN Nanoscale Vacuum Electronic Devices
Y Wei, M Li, Y Luo, J Zhang - 2021 22nd International Vacuum …, 2021 - ieeexplore.ieee.org
The performances of the GaN nanoscale vacuum electronic devices (NVEDs) were
investigated in this paper by theoretical simulation, considering the effects of the device …
investigated in this paper by theoretical simulation, considering the effects of the device …