Anisotropy control of the electronic structure in inorganic semiconductors is an important
step in develo** devices endowed with multi-function. Here, we demonstrate that the …

Achieving high-performance p-type semiconductors has been considered one of the most
challenging tasks for three-dimensional vertically integrated nanoelectronics. Although …

As an element of the graphene family, arsenic has attracted extensive attention due to its
excellent photoelectric and transport properties. Arsenene conforms to an eight-electron …

The rapid advancement of information technology has heightened interest in complementary
devices and circuits. Conventional p-type semiconductors often lack sufficient electrical …

Physical vapor deposition (PVD) methods have been widely employed for high‐quality
crystal growth and thin‐film deposition in semiconductor electronics. However, the …

Nanomaterials that can be easily processed into thin films are highly desirable for their wide
range of applicability in electrical and optical devices. Currently, Te‐based 2D materials are …

In this work, high‐quality 1D van der Waals (vdW) Nb2Pd3Se8 is synthesized, showing an
excellent scalability from bulk to single‐ribbon due to weakly bonded repeating unit ribbons …

High-mobility van der Waals ambipolar semiconductors are promising in logic and
reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled …

Abstract One-dimensional (1D) tellurium (Te) nanowires (NWs) have triggered intense
attention due to their remarkable properties in electronics, optoelectronics and nonlinear …

Two-dimensional p-type material, tellurium (Te), has been of particular interest owing to its
extraordinary electronic, optoelectronic, and thermoelectric properties. Here, we report a …