This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Iron with a large magnetic moment was widely believed to be harmful to the emergence of
superconductivity because of the competition between the static ordering of electron spins …

The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …

Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …

The field of nanotechnology has been gaining great success due to its potential in
develo** new generations of nanoscale materials with unprecedented properties and …