Microscopic dielectric permittivities of graphene nanoribbons and graphene

J Fang, WG Vandenberghe, MV Fischetti - Physical Review B, 2016 - APS
We derive a microscopic Poisson equation using the density-density response function. This
equation is valid for any realistic potential perturbation and permits the study of dielectric …

Dielectric function of colloidal lead chalcogenide quantum dots obtained by a Kramers-Krönig analysis of the absorbance spectrum

I Moreels, G Allan, B De Geyter, L Wirtz, C Delerue… - Physical Review B …, 2010 - APS
We combined the Maxwell-Garnett effective medium theory with the Kramers-Krönig
relations to obtain the complex dielectric function ϵ of colloidal PbS, PbSe, and PbTe …

Experimental demonstration of ultrashort-channel (3 nm) junctionless FETs utilizing atomically sharp V-grooves on SOI

S Migita, Y Morita, T Matsukawa… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
Ultrashort-channel junctionless FETs (JL-FETs) were fabricated on silicon-on-insulator
substrates utilizing atomically sharp V-shaped grooves produced by anisotropic wet etching …

Broadband visible and near-infrared absorbers implemented with planar nanolayered stacks

J Kim, H Oh, B Kang, J Hong, JJ Rha… - ACS Applied Nano …, 2020 - ACS Publications
Broadband light absorbers are highly desirable in various applications including solar-
energy harvesting, thermo-photovoltaics, and photon detection. The Fabry–Perot (F–P) …

Permittivity of oxidized ultra-thin silicon films from atomistic simulations

S Markov, G Penazzi, YH Kwok… - IEEE Electron …, 2015 - ieeexplore.ieee.org
We establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film
thickness by means of atomistic simulations within the density-functional-based tight-binding …

Quantum size effects on dielectric constants and optical absorption of ultrathin silicon films

G Zhang, MB Yu, CH Tung… - IEEE electron device letters, 2008 - ieeexplore.ieee.org
The size dependence of the dielectric constants and optical absorption for silicon
nanostructured films are investigated using density-functional theory. A critical thickness of …

Dielectric permittivity of ultrathin PbTiO3 nanowires from first principles

G Pilania, R Ramprasad - Journal of Materials Science, 2012 - Springer
We propose an efficient method to compute the dielectric permittivity of nanostructures by
combining first principles density functional perturbation theory with effective medium theory …

First-principles simulations of a graphene-based field-effect transistor

YP Wang, HP Cheng - Physical Review B, 2015 - APS
We improvise an approach to carry out first-principles simulations of graphene-based
vertical field-effect tunneling transistors that consist of a graphene| h-BN| graphene …

First-principles calculations of the dielectric properties of silicon nanostructures

S Hamel, AJ Williamson, HF Wilson, F Gygi… - Applied Physics …, 2008 - pubs.aip.org
We have investigated the static dielectric properties of silicon rods and slabs below 10 nm⁠,
in the long wavelength limit, by using first-principles density functional theory calculations …

Microscopic modeling of the dielectric properties of silicon nitride

TA Pham, T Li, S Shankar, F Gygi, G Galli - Physical Review B—Condensed …, 2011 - APS
We investigate the differences between the dielectric properties of bulk silicon nitride and
thin films, in both crystalline and amorphous structures. We show that to correctly account for …