Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

The research found that after do** with rare earth elements, a large number of electrons
and holes will be produced on the surface of AlN, which makes the material have the …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Aluminum scandium nitride barrier layers increase the available sheet charge carrier density
in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of …

Aluminum nitride (AlN), distinguished by exceptional mechanical, optical, and electronic
properties, has found extensive applications in diverse domains, including heat dissipation …

The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …

Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based
high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous …

Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including
compatibility with CMOS back-end processes, potential for sustainable miniaturization, and …

Machine learning interatomic potentials (MLIPs) have become a workhorse of modern
atomistic simulations, and recently published universal MLIPs, pre-trained on large datasets …

The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with
an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects …