The origin and mitigation of defects induced by metal evaporation in 2D materials
Evaporating metallic films on two-dimensional (2D) materials is a necessary process to build
electronic devices, but it produces bond breaking and metal penetration in the 2D material …
electronic devices, but it produces bond breaking and metal penetration in the 2D material …
Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models
J Bisquert - Advanced Energy Materials, 2024 - Wiley Online Library
Halide perovskites are at the forefront of active research in many applications, such as high
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …
Highly efficient back-end-of-line compatible flexible Si-based optical memristive crossbar array for edge neuromorphic physiological signal processing and bionic …
The emergence of the Internet-of-Things is anticipated to create a vast market for what are
known as smart edge devices, opening numerous opportunities across countless domains …
known as smart edge devices, opening numerous opportunities across countless domains …
Reliable Memristive Synapses Based on Parylene-MoOx Nanocomposites for Neuromorphic Applications
Memristive devices, known for their nonvolatile resistive switching, are promising
components for next-generation neuromorphic computing systems, which mimic the brain's …
components for next-generation neuromorphic computing systems, which mimic the brain's …
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
In this work, a nano-crystalline (NC) ZnO-based memristor was fabricated to investigate the
short-term memory characteristics for reservoir computing systems. The crystalline structure …
short-term memory characteristics for reservoir computing systems. The crystalline structure …
Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors
Memristors based on two-dimensional (2D) materials are a rapidly growing research area
due to their potential in energy-efficient in-memory processing and neuromorphic …
due to their potential in energy-efficient in-memory processing and neuromorphic …
Hysteresis in memristors produces conduction inductance and conduction capacitance effects
Memristors are devices in which the conductance state can be alternately switched between
a high and a low value by means of a voltage scan. In general, systems involving a chemical …
a high and a low value by means of a voltage scan. In general, systems involving a chemical …
Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices
JK Lee, S Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach
D Maldonado, A Cantudo, FM Gómez-Campos… - Materials …, 2024 - pubs.rsc.org
A 3D simulation of conductive nanofilaments (CNFs) in multilayer hexagonal-BN memristors
is performed. To do so, a simulation tool based on circuit breakers is developed including for …
is performed. To do so, a simulation tool based on circuit breakers is developed including for …
Dynamical variability, order-chaos transitions, and bursting Canards in the memristive Rulkov neuron model
The problem of analyzing the mechanisms of variability in neural dynamics caused by
memristive connections is considered. This problem is studied on the base of a neuron …
memristive connections is considered. This problem is studied on the base of a neuron …