Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models

J Bisquert - Advanced Energy Materials, 2024 - Wiley Online Library
Halide perovskites are at the forefront of active research in many applications, such as high
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Y **a, C Zhang, Z Xu, S Lu, X Cheng, S Wei, J Yuan… - Nanoscale, 2024 - pubs.rsc.org
To tackle the current crisis of Moore's law, a sophisticated strategy entails the development
of multistable memristors, bionic artificial synapses, logic circuits and brain-inspired …

Hysteresis in memristors produces conduction inductance and conduction capacitance effects

J Bisquert, JB Roldán, E Miranda - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Memristors are devices in which the conductance state can be alternately switched between
a high and a low value by means of a voltage scan. In general, systems involving a chemical …

Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation

M Ismail, M Rasheed, C Mahata, M Kang… - Journal of Alloys and …, 2023 - Elsevier
In this work, a nano-crystalline (NC) ZnO-based memristor was fabricated to investigate the
short-term memory characteristics for reservoir computing systems. The crystalline structure …

Reliable Memristive Synapses Based on Parylene-MoOx Nanocomposites for Neuromorphic Applications

A Minnekhanov, A Matsukatova… - … Applied Materials & …, 2023 - ACS Publications
Memristive devices, known for their nonvolatile resistive switching, are promising
components for next-generation neuromorphic computing systems, which mimic the brain's …

Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

H Ji, Y Lee, J Heo, S Kim - Journal of Alloys and Compounds, 2023 - Elsevier
In this study, we investigated the resistive switching (RS) characteristics of ZrO x/HfO x
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …

Temporal data learning of ferroelectric HfAlOx capacitors for reservoir computing system

J Lee, S Lee, J Kim, A Emelyanov, S Kim - Journal of Alloys and …, 2024 - Elsevier
Extensive research has been directed towards HfO x-based ferroelectric capacitor in
contrast to perovskite-based ferroelectric capacitors. HfO x-based ferroelectric capacitor …

Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices

JK Lee, S Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …

Hysteresis, rectification, and relaxation times of nanofluidic pores for neuromorphic circuit applications

J Bisquert - Advanced Physics Research, 2024 - Wiley Online Library
Based on the emergence of iontronic fluidic components for brain‐inspired computation, the
general dynamical behavior of nanopore channels is discussed. The main memory effects of …