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Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models
J Bisquert - Advanced Energy Materials, 2024 - Wiley Online Library
Halide perovskites are at the forefront of active research in many applications, such as high
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …
Organic iontronic memristors for artificial synapses and bionic neuromorphic computing
To tackle the current crisis of Moore's law, a sophisticated strategy entails the development
of multistable memristors, bionic artificial synapses, logic circuits and brain-inspired …
of multistable memristors, bionic artificial synapses, logic circuits and brain-inspired …
Highly efficient back-end-of-line compatible flexible Si-based optical memristive crossbar array for edge neuromorphic physiological signal processing and bionic …
The emergence of the Internet-of-Things is anticipated to create a vast market for what are
known as smart edge devices, opening numerous opportunities across countless domains …
known as smart edge devices, opening numerous opportunities across countless domains …
Hysteresis in memristors produces conduction inductance and conduction capacitance effects
Memristors are devices in which the conductance state can be alternately switched between
a high and a low value by means of a voltage scan. In general, systems involving a chemical …
a high and a low value by means of a voltage scan. In general, systems involving a chemical …
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
In this work, a nano-crystalline (NC) ZnO-based memristor was fabricated to investigate the
short-term memory characteristics for reservoir computing systems. The crystalline structure …
short-term memory characteristics for reservoir computing systems. The crystalline structure …
Reliable Memristive Synapses Based on Parylene-MoOx Nanocomposites for Neuromorphic Applications
Memristive devices, known for their nonvolatile resistive switching, are promising
components for next-generation neuromorphic computing systems, which mimic the brain's …
components for next-generation neuromorphic computing systems, which mimic the brain's …
Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices
In this study, we investigated the resistive switching (RS) characteristics of ZrO x/HfO x
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …
Temporal data learning of ferroelectric HfAlOx capacitors for reservoir computing system
Extensive research has been directed towards HfO x-based ferroelectric capacitor in
contrast to perovskite-based ferroelectric capacitors. HfO x-based ferroelectric capacitor …
contrast to perovskite-based ferroelectric capacitors. HfO x-based ferroelectric capacitor …
Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices
JK Lee, S Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
Hysteresis, rectification, and relaxation times of nanofluidic pores for neuromorphic circuit applications
J Bisquert - Advanced Physics Research, 2024 - Wiley Online Library
Based on the emergence of iontronic fluidic components for brain‐inspired computation, the
general dynamical behavior of nanopore channels is discussed. The main memory effects of …
general dynamical behavior of nanopore channels is discussed. The main memory effects of …