Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D)
semiconductors are essential for scaled optoelectronic devices. However, conventional …

Carbon‐based nanomaterials, including graphene, fullerenes, and carbon nanotubes, are
attracting significant attention as promising materials for next‐generation energy storage …

Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …

Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces
challenges such as interface imperfection and gate current leakage for an ultrathin silicon …

Reconfigurable field-effect transistors (FETs) combine unipolar n-and p-type characteristics
in a single programmable device and could be used to reduce the complexity of electronic …