Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Materials issues and devices of α-and β-Ga2O3
E Ahmadi, Y Oshima - Journal of Applied Physics, 2019 - pubs.aip.org
Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …
(depending on its crystal structure), which is much greater than those of conventional wide …
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
High-voltage vertical Ga 2 O 3 MISFETs are developed employing halide vapor phase
epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge concentration of …
epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge concentration of …
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
[BOOK][B] Gallium Oxide: Materials Properties, Crystal Growth, and Devices
M Higashiwaki, S Fujita - 2020 - books.google.com
This book provides comprehensive coverage of the new wide-bandgap semiconductor
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
A survey of acceptor dopants for β-Ga2O3
JL Lyons - Semiconductor science and technology, 2018 - iopscience.iop.org
With a wide band gap, high critical breakdown voltage and commercially available
substrates, Ga 2 O 3 is a promising material for next-generation power electronics. Like most …
substrates, Ga 2 O 3 is a promising material for next-generation power electronics. Like most …
The dawn of Ga2O3 HEMTs for high power electronics-A review
Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …
semiconductor material for intended applications in RF, power electronics, and sensors with …