Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …

Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

The electro-optical Pockels effect is an essential nonlinear effect used in many applications.
The ultrafast modulation of the refractive index is, for example, crucial to optical modulators …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized
freestanding single-crystalline ferroelectric barium titanate (BaTiO3) membranes with a …

The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy
dissipation in conventional electronics, often termed as Boltzmann Tyranny,,,,. Negative …

The fundamental challenge for designing transparent conductors used in photovoltaics,
displays and solid-state lighting is the ideal combination of high optical transparency and …