Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …
[HTML][HTML] Waste PET plastic derived ZnO@ NMC nanocomposite via MOF-5 construction for hydrogen and oxygen evolution reactions
Waste PET plastic is the main solid waste to deteriorate the environment. Herein, we have
utilized waste PET plastic to synthesize nitrogen doped mesoporous carbon functionalized …
utilized waste PET plastic to synthesize nitrogen doped mesoporous carbon functionalized …
[HTML][HTML] Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy
As semiconductor devices based on silicon reach their intrinsic material limits, compound
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …
Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy
Micro-Raman thermography is one of the most popular techniques for measuring local
temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial …
temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial …
Raman tensor elements of wurtzite ZnO
T Sander, S Eisermann, BK Meyer, PJ Klar - Physical Review B—Condensed …, 2012 - APS
The angle dependence of the phonon modes of a-plane (11 2¯ 0) and c-plane (0001) faced
ZnO crystals in wurtzite structure was studied at room temperature by Raman spectroscopy …
ZnO crystals in wurtzite structure was studied at room temperature by Raman spectroscopy …
Pressure‐dependent behavior of defect‐modulated band structure in boron arsenide
The recent observation of unusually high thermal conductivity exceeding 1000 W m− 1 K− 1
in single‐crystal boron arsenide (BAs) has led to interest in the potential application of this …
in single‐crystal boron arsenide (BAs) has led to interest in the potential application of this …
Germanium–the superior dopant in n‐type GaN
We present an experimental study about the influence of Si and Ge do** in GaN with
focus on the occurring strain levels and overall crystalline quality. Extremely high quality …
focus on the occurring strain levels and overall crystalline quality. Extremely high quality …
Optical signature of Mg-doped GaN: Transfer processes
Mg do** of high quality, metal organic chemical vapor deposition grown GaN films results
in distinct traces in their photoluminescence and photoluminescence excitation spectra. We …
in distinct traces in their photoluminescence and photoluminescence excitation spectra. We …
Dephasing by optical phonons in GaN defect single-photon emitters
Y Geng, J Luo, L van Deurzen, H ** Concentration Profiles of {ZnCdO/ZnO} Superlattices
In this study, we investigated Eu-doped {ZnCdO/ZnO} superlattice structures grown by
plasma-assisted molecular beam epitaxy. Such materials may find their use in thin-film solar …
plasma-assisted molecular beam epitaxy. Such materials may find their use in thin-film solar …