The expansion on the use of Electric Vehicles demands new mechanisms to ease the
charging process, making it autonomous and with a reduced user intervention. This paper …

The increasing penetration of offshore wind power generation promotes the revolution of
wind turbine toward high-power application. The development of high-power wind turbine …

In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power
switches at 600-V class is conducted in single-phase T-type inverter. Gate driver …

Due to the continuously increasing demand on switched-mode power converters (ie, dc-dc,
dc-ac, ac-dc, and ac-ac) that can achieve high efficiency at high switching frequency, soft …

The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …

Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …

Within a power converter, multiple currents are usually measured for control, protection,
and/or monitoring. They are therefore important sources of information, which must …

Abstract Gallium oxide (Ga 2 O 3) is a representative of ultra-wide bandgap semiconductors,
with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent …

The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

Two major challenges in the transformerless photovoltaic (PV) inverters are the presence of
common-mode leakage currents, and as in most single-phase converters the need for …