The recent controversy on the bandgap of InN is addressed, with reference to optical data on
single crystalline thin film samples grown on sapphire. The optical absorption spectra …

InN has emerged as a highly promising material for a number of technological applications,
but progress is still hampered by lack of control over its conductivity. The material exhibits a …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

The influence of dislocations on electron transport properties of undoped InN thin films
grown by molecular-beam epitaxy on AlN (0001) pseudosubstrates is reported. The …

We present a comprehensive study of vacancy and vacancy-impurity complexes in InN
combining positron annihilation spectroscopy and ab initio calculations. Positron densities …

MBE-grown Sn-and Mg-doped epitaxial In 2 O 3 thin-film samples with varying do**
concentrations have been measured using positron Doppler spectroscopy and compared to …

Positron annihilation is an established technique for investigating vacancy-type defects in
semiconductors. When a positron is implanted into solids, it annihilates with an electron and …

Positron annihilation spectroscopy has been used to study the vacancy-type defects
produced in films grown by metalorganic chemical vapor deposition on different sapphire …

A model for the influence of different contributions to the high electron concentration in
dependence on the film thickness of state-of-the-art InN layers grown by molecular-beam …

The quantitative interdependencies of growth conditions, crystal defects and
electrical/electronic properties of InN thin films, grown by plasma-assisted molecular beam …