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[HTML][HTML] Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …
Ultralow–switching current density multilevel phase-change memory on a flexible substrate
Phase-change memory (PCM) is a promising candidate for data storage in flexible
electronics, but its high switching current and power are often drawbacks. In this study, we …
electronics, but its high switching current and power are often drawbacks. In this study, we …
Flexible memristor-based nanoelectronic devices for wearable applications: a review
Z Rao, X Wang, S Mao, J Qin, Y Yang… - ACS Applied Nano …, 2023 - ACS Publications
In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …
devices, wearable electronic products can effectively improve work efficiency and quality of …
Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing
In today's new era, multifunctional devices are most prominent due to their compact design,
reduction in operating cost, and reduced need of being limited to single functional devices …
reduction in operating cost, and reduced need of being limited to single functional devices …
ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …
been conducted. Firstly, the motivation for creating new memory technology is presented …
Enhanced linearity in CBRAM synapse by post oxide deposition annealing for neuromorphic computing applications
Artificial synapse with good linearity is a critical issue in conductive bridging random access
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …
A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments
Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in
large-scale integration systems due to its high switching speed and cost-effective priority …
large-scale integration systems due to its high switching speed and cost-effective priority …
An oxide-based bilayer ZrO₂/IGZO memristor for synaptic plasticity and artificial nociceptor
X Chen, Y **, Z Tao, L Jiang, X Wu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
As artificial intelligence technology advances, memristors are promising to be used as
artificial synapses to mimic various biological learning behaviors. In this work, all the …
artificial synapses to mimic various biological learning behaviors. In this work, all the …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …