Reliability issues of gallium nitride high electron mobility transistors
In the present paper we review the most recent degradation modes and mechanisms
recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron …
recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron …
Electric field map** of wide-bandgap semiconductor devices at a submicrometre resolution
Electric fields drive the degradation of wide-bandgap semiconductor devices. However,
directly map** the electric field inside an active device region remains challenging. Here …
directly map** the electric field inside an active device region remains challenging. Here …
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
J Kuzmik, G Pozzovivo, C Ostermaier… - Journal of Applied …, 2009 - pubs.aip.org
We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-
mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress …
mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress …
Piezotronic effect modulated flexible AlGaN/GaN high-electron-mobility transistors
Flexible electronic technology has attracted great attention due to its wide range of potential
applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work …
applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work …
Trap** and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications
This paper reports on an extensive analysis of the trap** processes and of the reliability of
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …
Behavioral modeling of GaN FETs: A load-line approach
In this paper, a new model formulation is presented that correctly accounts for low-frequency
dispersion (ie, trap** and thermal phenomena) affecting field-effect transistors (FETs). In …
dispersion (ie, trap** and thermal phenomena) affecting field-effect transistors (FETs). In …
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Passivation
We studied submicrometer (LG= 0.15-0.25¿ m) gate-recessed InAlN/AlN/GaN high-electron
mobility transistors (HEMTs) on SiC substrates with 25-nm Al 2 O 3 passivation. The …
mobility transistors (HEMTs) on SiC substrates with 25-nm Al 2 O 3 passivation. The …
A comprehensive computational modeling approach for AlGaN/GaN HEMTs
This paper for the first time presents a comprehensive computational modeling approach for
AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different …
AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different …
Influence of field plate on the transient operation of the AlGaN/GaN HEMT
A Brannick, NA Zakhleniuk, BK Ridley… - IEEE Electron …, 2009 - ieeexplore.ieee.org
In this letter, a link between the AlGaN/GaN high-electron-mobility-transistor (HEMT) field
plate (FP) and the rate of reoccupation of surface traps is presented. Surface traps are …
plate (FP) and the rate of reoccupation of surface traps is presented. Surface traps are …
Part II: Proposals to independently engineer donor and acceptor trap concentrations in GaN buffer for ultrahigh breakdown AlGaN/GaN HEMTs
In part I of this paper, we developed physical insights into the role and impact of acceptor
and donor traps-resulting from C-do** in GaN buffer-on avalanche breakdown in …
and donor traps-resulting from C-do** in GaN buffer-on avalanche breakdown in …